Therefore, the optical responsivity and signal to noise ratio can be further improved by just using a single layer a-IZO channel material, especially under the blue light. This means there is a higher probability for ionizing the deep, neutral oxygen vacancy states (V O) to the shallow donor states (V O 2+) during the light illumination in IZO 16. Additionally, there are more sub-gap states located 2 eV below the mobility edge of IZO at deep state, compared with the traditional amorphous InGaZnO (a-IGZO) channel material. Furthermore, the band-gap energy of IZO is about 2.9 eV, which means that the blue light with a wavelength of 430 nm can be absorbed or detected by this material 15.
Unlike the conventional amorphous silicon (a-Si) TFT with poor carrier transport properties or the polycrystalline silicon (poly-Si) TFTs with poor uniformity over a large area, a-IZO shows a high electron mobility (~10 cm 2/V.s), good uniformity, low manufacturing cost and low process temperature 13, 14. Besides, amorphous metal oxide (AMO), especially the amorphous InZnO (a-IZO), has attracted much attention as the active layer material recently 12. The sensor can be integrated into display panels of hand-held consumer products for realizing photo-sensing functions such as ambient light sensors, image scanners, touch panel, etc 6, 7, 8, 9, 10, 11. Among those novel applications, the most interesting topic of TFT-LCDs would be the optical detection sensor. With the rapid progress and continuing improvements of thin-film transistors (TFTs) technologies over the past few years, TFT display panels have been developed not only for screens but also for other applications, like flexible electronics, biomedicine sensors, nonvolatile memories, 3-dimentional integrated circuits 1, 2, 3, 4, 5. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (~10 5) under the blue light illumination.
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